Observation of electron polarization above 80% in photoemission from strained III-V compounds

Conference · Sat Feb 01 00:00:00 EST 1992

OSTI ID:5629701

Garwin, E L; Maruyama, T ^[1]; Prepost, R; Zapalac, G H ^[2]

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1. Stanford Linear Accelerator Center, Menlo Park, CA (United States)
2. Wisconsin Univ., Madison, WI (United States). Dept. of Physics

Spin-polarized electron photoemission has been investigated for strained III--V compounds; (1) strained In{sub x}Ga{sub 1-x}As epitaxially grown on a GaAs substrate, and (2) strained GaAs grown on a GaAs{sub 1-x}P{sub x} buffer layer. The lattice mismatched heterostructure results in a highly strained epitaxial layer, and electron spin polarization as high as 90% has been observed.

• Research Organization: Stanford Linear Accelerator Center, Menlo Park, CA (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00515; AC02-76ER00881
• OSTI ID: 5629701
• Report Number(s): SLAC-PUB-5751; CONF-9203100-1; ON: DE92009482
• Resource Relation: Conference: Symposium on surface science 3S* 92, Savoie (France), 15-21 Mar 1992
• Country of Publication: United States
• Language: English

Related Subjects

43 PARTICLE ACCELERATORS
36 MATERIALS SCIENCE
ELECTRON SOURCES
POLARIZATION
GALLIUM ARSENIDES
PHOTOEMISSION
CHEMICAL VAPOR DEPOSITION
EPITAXY
LINEAR ACCELERATORS
POLARIZED BEAMS
SPIN ORIENTATION
ACCELERATORS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHEMICAL COATING
DEPOSITION
EMISSION
GALLIUM COMPOUNDS
ORIENTATION
PARTICLE SOURCES
PNICTIDES
RADIATION SOURCES
SECONDARY EMISSION
SURFACE COATING
430301* - Particle Accelerators- Ion Sources
360606 - Other Materials- Physical Properties- (1992-)