Si- and C-rich structure of the 6{ital H}-SiC(0001) surface

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.589455· OSTI ID:562917

Li, L; Hasegawa, Y; Sakurai, T ^[1]

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1. Institute for Materials Research, Tohoku University, Sendai 980-77 (Japan)

The reconstructions of the 6H-SiC(0001) surface under both Si-rich and C-rich conditions were studied using field ion-scanning tunneling microscopy (FI{endash}STM). The sample was cleaned by {ital in situ} Si beam etching at 900{endash}1000{degree}C. The as-cleaned surface showed a ({radical}3{times}{radical}3) structure. The Si-rich phases were produced by annealing the sample in a Si flux. With increasing Si concentration, (2{times}2), (2{radical}3{times}6{radical}3), (3{times}3), and (7{times}7) reconstructions were observed. Reaction of the Si-rich phases with C{sub 2}H{sub 2} molecules at 1050{degree}C resulted in the formation of a C-rich surface, which exhibited a (2{times}2)/(6{times}6) reconstruction. A structure model for ({radical}3{times}{radical}3) reconstruction is proposed, and possible applications of using the surface reconstruction to selectively grow SiC polytype is discussed. {copyright} {ital 1997 American Vacuum Society.}

• OSTI ID: 562917
• Report Number(s): CONF-9609240--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 15; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL REACTIONS
CRYSTAL STRUCTURE
ETCHING
METHYLENE RADICALS
PHASE STUDIES
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE CLEANING