Infrared spectroscopy of hydrides on the 6H-SiC surface
- Yokosuka Research Laboratory, Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-01 (Japan)
Hydrides on the 6H-SiC(000{bar 1}) and (0001) surfaces before and after hydrogen annealing were investigated by infrared attenuated total reflection spectroscopy. The absorption bands of CH{sub 2} and CH{sub 3} were observed from the 6H-SiC(000{bar 1}) and (0001) surfaces before hydrogen annealing. After hydrogen annealing, a sharp C{endash}H stretching vibration attributable to a monohydride appeared on the 6H-SiC(000{bar 1}) surface, in contrast to a sharp Si{endash}H stretching vibration which can be observed on the 6H-SiC(0001) surface. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 508935
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 70; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
Similar Records
Identification of the terminating structure of 6H{endash}SiC(0001) by coaxial impact collision ion scattering spectroscopy
GaN grown on hydrogen plasma cleaned 6H-SiC substrates
Growth defects in GaN films on 6H{endash}SiC substrates
Journal Article
·
Mon Mar 31 23:00:00 EST 1997
· Applied Physics Letters
·
OSTI ID:544504
GaN grown on hydrogen plasma cleaned 6H-SiC substrates
Journal Article
·
Sun Feb 14 23:00:00 EST 1993
· Applied Physics Letters; (United States)
·
OSTI ID:6828103
Growth defects in GaN films on 6H{endash}SiC substrates
Journal Article
·
Wed May 01 00:00:00 EDT 1996
· Applied Physics Letters
·
OSTI ID:283789