Growth defects in GaN films on 6H{endash}SiC substrates
- Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106-7204 (United States)
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907 (United States)
Lattice defects in GaN epilayers grown on 6H{endash}SiC(0001) by metalorganic vapor phase epitaxy (MOVPE) have been characterized by transmission electron microscopy (TEM). The predominant defects in the film were threading dislocations and half-loops with Burgers vectors 1/3{l_angle}11{bar 2}0{r_angle}, [0001], and 1/3{l_angle}11{bar 2}3{r_angle}. Planar faults were also observed in the film that are thought to be inversion domain boundaries (IDBs). {copyright} {ital 1996 American Institute of Physics.}
- DOE Contract Number:
- FG02-93ER45496
- OSTI ID:
- 283789
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 68; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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