Properties of GaN grown at high rates on sapphire and on 6H{endash}SiC
- Lawrence Berkeley National Laboratory and University of California, Berkeley, California 94720 (United States)
- Physikalisches Institut, Justus Liebig Universitaet, 35392 Giessen (Germany)
Thick GaN films were deposited with growth rates as high as 250 {mu}m/h by the direct reaction of ammonia and gallium vapor at 1240{degree}C. The characteristics of our films are comparable to those of typical thin films grown by metal organic chemical vapor deposition or molecular beam epitaxy. Grown under identical conditions, films on (0001) sapphire and on (0001) 6H{endash}SiC were compared in terms of their structural and optical properties. Considering x-ray rocking curve full width at half-maximum (FWHM: 420 arcsec), photoluminescence linewidths of the excitons (FWHM: 3 meV at 6 K and 100 meV at 300 K), free electron concentration, defect related luminescence, and the homogeneity of these properties, we find superior values for films grown on SiC. For both substrate materials we find an optimum growth rate window of 40{endash}80 {mu}m/h. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 388147
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 69; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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