Identification of the terminating structure of 6H{endash}SiC(0001) by coaxial impact collision ion scattering spectroscopy

Journal Article · Tue Apr 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119042· OSTI ID:544504

Ishiyama, O; Nishihara, T; Shinohara, M ^[1]; Ohtani, F ^[2]; Nishino, S; Saraie, J ^[3]

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1. Department of Surface Analysis and Semiconductor Equipment, Shimadzu Corporation, 380-1 Horiyamashita, Hadano-City, Kanagawa 259-13 (Japan)
2. Technology Research Laboratory, Shimadzu Corporation, 3-9 Hikaridai, Seikacho, Sorakugun, Kyoto 619-02 (Japan)
3. Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Kyoto 606 (Japan)

The terminating structure of 6H{endash}SiC(0001) substrates fabricated by the Acheson method was directly identified by means of coaxial impact collision ion scattering spectroscopy (CAICISS). The CAICISS spectra showed that the topmost surfaces of the samples were Si-terminated planes for both the front and rear faces. It was also shown that the (0001)Si face was composed of Si-terminated flat terraces and steps, the height of which corresponded to one-half the unit cell length along the 6H{endash}SiC c axis. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 544504
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 70; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
CRYSTAL STRUCTURE
ION SCATTERING ANALYSIS
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
SUBSTRATES
SURFACES