Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001)
- Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, and INSTM, via Orabona, 4-70126 Bari (Italy)
Thin layers of AlN and GaN have been grown by plasma-assisted molecular beam epitaxy on Si-face 4H- and 6H-SiC(0001){sub Si} substrates. The impact of the SiC surface preparation and oxide removal via a Ga deposition and desorption process on the chemistry and structure of the GaN/SiC and AlN/SiC interfaces, and on the GaN/SiC subsurface reactivity is characterized. We also investigate the impact of this process on growth mode evolution.
- OSTI ID:
- 20636933
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 86; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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