GaN grown on hydrogen plasma cleaned 6H-SiC substrates

Journal Article · Mon Feb 15 04:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108845· OSTI ID:6828103

Lin, M E; Strite, S; Agarwal, A; Salvador, A; Zhou, G L; Teraguchi, N; Rockett, A; Morkoc, H ^[1]

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1. Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 1101 West Springfield Avenue, Urbana, Illinois 61801 (United States)

We report epitaxial GaN layers grown on 6H-SiC (0001) substrates. A two stage substrate preparation procedure is described which effectively removes oxygen from the SiC substrate surface without the need of elaborate high temperature processing. In the first step, dangling Si bonds on the substrate surface are hydrogen passivated using a HF dip before introduction into vacuum. Second, the substrate is treated with a hydrogen plasma reducing the amount of oxygen-carbon bonding to below the x-ray photoemission detection limit. Upon heating in the molecular beam epitaxy (MBE) growth chamber, the SiC substrates are observed to have a sharp (1[times]1) reconstruction with Kikuchi lines readily visible. GaN epilayers deposited on AlN buffer layers by plasma enhanced MBE show sharp x-ray diffraction and photoluminescence peaks.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 6828103
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:7; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CARBIDES
CARBON COMPOUNDS
CHEMICAL REACTIONS
CLEANING
COHERENT SCATTERING
DIFFRACTION
EPITAXY
ETCHING
GALLIUM COMPOUNDS
GALLIUM NITRIDES
HYDROGENATION
LUMINESCENCE
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
PHOTOLUMINESCENCE
PLASMA
PNICTIDES
SCATTERING
SILICON CARBIDES
SILICON COMPOUNDS
SURFACE CLEANING
SURFACE FINISHING
X-RAY DIFFRACTION