Interaction of C{sub 60} with the (3{times}3) and ({radical}3{times}{radical}3) surfaces of 6H-SiC(0001): Adsorption, decomposition, and SiC growth

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.589453· OSTI ID:562915

Li, L; Hasegawa, Y ^[1]; Shinohara, H ^[2]; Sakurai, T ^[1]

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1. Institute for Materials Research, Tohoku University, Sendai 980-77 (Japan)
2. Chemistry Department, Nagoya University, Nagoya 464-01 (Japan)

Scanning tunneling microscopy was used to study the interaction of C{sub 60} with the silicon rich (3{times}3) and carbon rich ({radical}3{times}{radical}3) surfaces of 6H-SiC(0001). For both reconstructions, triangular or hexagonal islands commensurate with the substrate structure were observed at submonolayer coverages. The C{sub 60} exhibits island growth on these surfaces, with the second layer nucleating on the C{sub 60} islands before completion of the first layer. For coverages greater than one monoloyer, a closed-packed face-centered-cubic (111) structure was formed on the (3{times}3) surface. On the ({radical}3{times}{radical}3) surface, a disordered layer was observed. A SiC film was also grown using C{sub 60} as the carbon source. {copyright} {ital 1997 American Vacuum Society.}

• OSTI ID: 562915
• Report Number(s): CONF-9609426--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 15; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
CRYSTAL GROWTH
DECOMPOSITION
DISSOCIATION
FULLERENES
NUCLEATION
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SILICON COMPOUNDS
THIN FILMS