Formation of cobalt disilicide films on ({radical}3 x {radical}3)6H-SiC(0001)
This paper presents a detailed study of thin Co films grown directly, sequentially, and by codeposition with Si on the ({radical}3 x {radical}3)-R30{sup o} surface of 6H-SiC(0001). The structure, chemistry, and morphology of the films were determined using x-ray absorption fine structure, x-ray photoelectron spectroscopy, Auger electron spectroscopy, and atomic force microscopy. For directly deposited Co films (1--8 nm) graphite layers form on top of the film surface during annealing, whereas Co stays mainly unreacted over a temperature range of 300--1000{sup o}C. The formation of CoSi{sub 2} is achieved by sequential and codeposition of Co and Si. Films annealed at 550{sup o}C are polycrystalline and further annealing to 650{sup o}C causes no C segregation, but there is islanding of the films. Attempts to improve film morphology and homogeneity including applying a template method and varying growth temperature are also reported.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40205436
- Journal Information:
- Physical Review B, Vol. 63, Issue 11; Other Information: DOI: 10.1103/PhysRevB.63.115312; Othernumber: PRBMDO000063000011115312000001; 043107PRB; PBD: 15 Mar 2001; ISSN 0163-1829
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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