Chemical processes in the condensation of zinc selenide on gallium arsenide
Heterojunctions of the GaAs-ZnSe type are promising from the standpoint of the possibility of using them as solar energy transformers. In this case, to obtain high efficiency it is necessary to produce structurally perfect heterojunctions. The purpose of this work was to find the optimum conditions of production of epitaxial heterostructures of the GaAs substrate-ZnSe film, structurally perfect and free of oxygen contaminations. Three temperature regions of growth of zinc selenide films on gallium arsenide were found: I) region of physical condensation; II) region of chemical interaction of materials with the formation of an intermediate layer of As/sub 2/Se/sub 3/; III) region of chemical interaction with the formation of an intermediate layer of Ga/sub 2/Se/sub 3/. The dependence of the nature of the chemical interaction on the polarity of the axis <111> of gallium arsenide was detected: The region Ib is absent on the plane )111)Ga, and oriented growth begins at lower temperatures. The values of the activation energies of growth of films in chemical interaction were determined: In the formation of an intermediate layer of As/sub 2/Se/sub 3/, E/sub int/ = 0.7-1 eV; in the formation of Ga/sub 2/Se/sub 3/, E/sub int/ = 2-2.4 eV.
- OSTI ID:
- 5627989
- Journal Information:
- J. Appl. Chem. USSR (Engl. Transl.); (United States), Vol. 55:8; Other Information: Translated from Zh. Prikl. Khim.; 55; No. 8, 1716-1719(Aug 1982)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ARSENIC SELENIDES
CRYSTAL GROWTH
GALLIUM ARSENIDES
HETEROJUNCTIONS
ZINC SELENIDES
ACTIVATION ENERGY
CHEMICAL REACTIONS
EPITAXY
SOLAR ENERGY CONVERSION
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CONVERSION
ENERGY
ENERGY CONVERSION
GALLIUM COMPOUNDS
JUNCTIONS
PNICTIDES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
ZINC COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion