Growth and characterization of gallium arsenide using single-source precursors: OMCVD and bulk pyrolysis studies

Journal Article · · Chemistry of Materials; (United States)

DOI:https://doi.org/10.1021/cm00011a023· OSTI ID:5410988

Miller, J E; Kidd, K B; Cowley, A H; Jones, R A; Ekerdt, J G ^[1]; Gysling, H J; Wernberg, A A; Blanton, T N ^[2]

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1. Univ. of Texas, Austin (USA)
2. Eastman Kodak Company, Rochester, NY (USA)

Films of gallium arsenide have been grown on GaAs(100), GaAs(111), and {alpha}-Al{sub 2}O{sub 3}(0001) at 1 {times} 10{sup {minus}4} Torr and 525{degree}C by using a single-source precursor (Me{sub 2}Ga({mu}-t-Bu{sub 2}As)){sub 2} (1) and H{sub 2} carrier gas. These conditions resulted in GaAs growth rates of 0.75 {mu}m/h. The carbon content of the films was less than the XPS detection limit (1,000 ppm). Secondary ion mass spectrometry (SIMS) revealed that carbon was not incorporated from the precursor. Photoluminescence spectra (5 K) of the material grown on {alpha}-Al{sub 2}O{sub 3}(0001) exhibited the 1.52-eV bandgap of GaAs. However, the material appears degeneratively doped. X-ray diffraction, Berg-Barrett topography, and pole figure analysis indicated that these GaAs films are (111) oriented and polycrystalline. Mass spectroscopic analysis of the OMCVD reaction of 1 revealed that the volatile products are predominantly isobutylene and methane. Bulk pyrolysis studies demonstrated that at lower temperatures (350{degree}C) the decomposition of 1 is incomplete and that isobutane is produced in addition to isobutylene and methane. Under similar conditions, the decomposition of (n-Bu{sub 2}Ga({mu}-t-Bu{sub 2}As)){sub 2} (2) is virtually complete. The thermolysis of 2 produced isobutane (60%), isobutylene (32%), n-butane (9.6%), 1-butene (44%), trans-2-butene (26%), and cis-2-butene (19%).

• OSTI ID: 5410988
• Journal Information: Chemistry of Materials; (United States), Vol. 2:5; ISSN 0897-4756
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
STRUCTURAL CHEMICAL ANALYSIS
MASS SPECTROSCOPY
PHOTOELECTRON SPECTROSCOPY
PHOTOLUMINESCENCE
PYROLYSIS
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
COHERENT SCATTERING
DECOMPOSITION
DEPOSITION
DIFFRACTION
ELECTRON SPECTROSCOPY
GALLIUM COMPOUNDS
LUMINESCENCE
MATERIALS
PNICTIDES
SCATTERING
SPECTROSCOPY
SURFACE COATING
THERMOCHEMICAL PROCESSES
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies