Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

Technical Report · Tue Jan 01 04:00:00 EST 1980

DOI:https://doi.org/10.2172/5542580· OSTI ID:5542580

Wessels, B W

In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10/sup 14/ - 10/sup 15/ cm/sup -3/. Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity.

• Research Organization: Northwestern Univ., Evanston, IL (USA)
• DOE Contract Number: AC02-79ER10390
• OSTI ID: 5542580
• Report Number(s): DOE/ER/10390-1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CURRENT DENSITY
DESIGN
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PERFORMANCE
PHYSICAL PROPERTIES
PNICTIDES
SCHOTTKY BARRIER DIODES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SUBSTRATES
TEMPERATURE DEPENDENCE
TRAPPING
ZINC COMPOUNDS
ZINC SELENIDES