Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

Technical Report · Tue Jan 01 00:00:00 EST 1980

DOI:https://doi.org/10.2172/5542580· OSTI ID:5542580

Wessels, B W

In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10/sup 14/ - 10/sup 15/ cm/sup -3/. Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity.

• Research Organization: Northwestern Univ., Evanston, IL (United States)
• DOE Contract Number: AC02-79ER10390
• OSTI ID: 5542580
• Report Number(s): DOE/ER/10390-1; TRN: 80-006663
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ELECTRIC CONDUCTIVITY
SCHOTTKY BARRIER DIODES
DESIGN
ZINC SELENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CURRENT DENSITY
ELECTRICAL PROPERTIES
EPITAXY
PERFORMANCE
SUBSTRATES
TEMPERATURE DEPENDENCE
TRAPPING
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL STRUCTURE
GALLIUM COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
ZINC COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
360603 - Materials- Properties