Investigation of deep level defects in epitaxial semiconducting. Progress report, June 15, 1982-June 14, 1983. [N-n ZnSe/GaAs]

Technical Report · Tue Feb 15 04:00:00 EST 1983

OSTI ID:6385646

Wessels, B W

Optical deep level transient spectrosopy (DLTS) on doped, undoped and irradiated ZnSe was performed. Doping of ZnSe with nitrogen resulted in the formation of relatively shallow acceptor states as determined by DLTS. This is the first direct electrical evidence for shallow acceptor states in ZnSe. N-n heterojunctions fabricated from the ZnSe/GaAs epitaxial layers had built-in voltages different from the theoretically predicted values.

• Research Organization: Northwestern Univ., Evanston, IL (USA)
• DOE Contract Number: AC02-79ER10390
• OSTI ID: 6385646
• Report Number(s): DOE/ER/10390-5; ON: DE83007523
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INORGANIC PHOSPHORS
JUNCTIONS
LEPTON BEAMS
MATERIALS
MEV RANGE
MEV RANGE 01-10
PARTICLE BEAMS
PHOSPHORS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RESEARCH PROGRAMS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS
TRAPS
ZINC COMPOUNDS
ZINC SELENIDES
ZINC SULFIDES