Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, June 15, 1980-June 14, 1981

Technical Report · Sun Feb 15 04:00:00 EST 1981

DOI:https://doi.org/10.2172/6653403· OSTI ID:6653403

Wessels, B W

High conductivity ZnSe single crystalline films have been heteroepitaxially deposited on GaAs substrates using open tube chemical vapor transport. Unintentionally doped films had net donor densities of 10/sup 14/ - 10/sup 16/ cm/sup -3/ and resistivities of 1 to 10/sup 3/ ohm cm. Resistivity was found to be strongly dependent upon zinc partial pressure during deposition. Electron mobilities of the order of 50 to 200 cm/sup 2//V sec were observed which suggested that the films are highly compensated. Properties of the deep level defects in heteroepitaxially grown ZnSe have been investigated using transient capacitance spectroscopy. A series of electron traps were observed with activation energies of 0.33, 0.35, 0.42, 0.71 and 0.86 eV in Au/ZnSe Schottky diodes. Trap concentration ranged from 10/sup 12/ to 10/sup 14/ cm/sup -3/ and depended on the zinc partial pressure. A model for the defect structure of ZnSe was proposed. Growth studies of ZnS/sub x/Se/sub 1-x/ on GaAs were begun.

• Research Organization: Northwestern Univ., Evanston, IL (USA). Dept. of Materials Science and Engineering
• DOE Contract Number: AC02-79ER10390
• OSTI ID: 6653403
• Report Number(s): DOE/ER/10390-2
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SELENIDES
SELENIUM COMPOUNDS
SURFACE COATING
ZINC COMPOUNDS
ZINC SELENIDES