A FETISH for gallium arsenide
- Rice Univ., Houston, TX (United States)
An overview of the development of a new dielectric material, cubic-GaS, from the synthesis of new organometallic compounds to the fabrication of a new class of gallium arsenide based transistor is presented as a representative example of the possibility that inorganic chemistry can directly effect the development of new semiconductor devices. The gallium sulfido compound [({sup t}Bu)GaS]{sub 4}, readily prepared from tri-tert-butyl gallium, may be used as a precursor for the growth of GaS thin films by metal organic chemical vapor deposition (MOCVD). Photoluminescence and electronic measurements indicate that this material provides a passivation coating for GaAs. Furthermore, the insulating properties of cubic-GaS make it suitable as the insulating gate layer in a new class of GaAs transistor: a field effect transistor with a sulfide heterojunction (FETISH).
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States); Petroleum Research Fund (United States)
- OSTI ID:
- 470882
- Report Number(s):
- CONF-951155--; ISBN 1-55899-313-4
- Country of Publication:
- United States
- Language:
- English
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