Optimal design of logic elements in gallium-arsenide LSI circuits

Journal Article · Thu May 01 00:00:00 EDT 1986 · Sov. Microelectron.; (United States)

OSTI ID:5679032

Starosel'skii, V I

The prospects for improving the speed and energy characteristics of digital large-scale integrated (LSI) circuits depends in part on mastering the industrial production of gallium-arsenide (GaAs) LSI and developing optimal GaAs logic design methods. The authors investigate a number of questions, including the choice of threshold voltages, switching variants, topology optimization, the effect of gate length, and offer a comparative analysis of different logic families. Three fundamental families are used for the elemental base, depending on the magnitude of threshold voltage: normally on transistors; normally off transistors; and quasinormally off transistors.

• Research Organization: Moscow Institute of Electronic Technology, USSR
• OSTI ID: 5679032
• Journal Information: Sov. Microelectron.; (United States), Journal Name: Sov. Microelectron.; (United States) Vol. 14:5; ISSN SOMID
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
320303 -- Energy Conservation
Consumption
& Utilization-- Industrial & Agricultural Processes-- Equipment & Processes
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CHARGE COLLECTION
COMPARATIVE EVALUATIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DESIGN
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELECTRONIC CIRCUITS
ENERGY EFFICIENCY
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
LOGIC CIRCUITS
MATHEMATICAL MODELS
MICROELECTRONIC CIRCUITS
MOBILITY
OPTIMIZATION
PARTICLE MOBILITY
PHYSICAL PROPERTIES
PNICTIDES
POINT DEFECTS
POWER INPUT
SCHOTTKY DEFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
VACANCIES