Gallium arsenide for devices and integrated circuits
Gallium Arsenide has long been hailed as the material of the future and it is only in recent years that the technology associated with its growth and processing has matured to the point where IC production can be contemplated at the industrial level. This point has now been reached and the electronics industries in Europe, the USA and Japan are actively moving from research activities into product development using this and related material. The text is divided into 15 chapters: Gallium Arsenide: Physical and Transport Properties; Liquid phase and Vapour Phase Epitaxy of GaAs and Related Compounds; Expitaxial Growth and GaAs: MBE and MOCVD; Characterization of GaAs I: Electrical Techniques; Characterization of GaAsII: Ion Beam Analysis; Ion Implantation; Wet and Dry Processing GaAs; Microwave and Millimetre - Wave Diodes; GaAs Mesfet's and High Electron Mobility Transistors (HEMT); Optoelectronic Devices and Components; Gallium Arsenide Monolithic Microwave Integrated Circuits; GaAs Digital Integrated Circuits; III-V Semiconductors for Solar Cells.
- OSTI ID:
- 6998330
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360600* -- Other Materials
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
DIGITAL SYSTEMS
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTEGRATED CIRCUITS
ION IMPLANTATION
MATERIALS
MEASURING METHODS
MICROELECTRONIC CIRCUITS
MICROWAVE EQUIPMENT
PHASE STUDIES
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
PROCESSING
PRODUCTION
REVIEWS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT