cw multiwavelength transverse-junction-stripe lasers grown by molecular beam epitaxy operating predominantly in single-longitudinal modes

Journal Article · Sat Mar 15 04:00:00 EST 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91538· OSTI ID:5619151

Tsang, W T

A new multiwavelength transverse-junction-stripe (MW-TJS) laser is developed and demonstrated. Such MW-TJS laser is capable of emitting multiple predominantly single--longitudinal mode emissions having preselected lasing wavelengths. The wavelengths of the lasing lines, their separations, and the number of lasing lines obtainable from a single MW-TJS laser can be predetermined. In this experiment, the MW-TJS lasers were grown by molecular beam epitaxy (MBE). As an example, four different lasing lines at 9025, 8793, 8532 and 8276 A were obtained simultaneously from a single 4-wavelength TJS laser. The pulsed and cw current thresholds I/sub th/ for such 4-wavelength TJS laser with cavity length of 375 ..mu..m and each active layer thickness of 0.5 ..mu..m are 245 and 252 mA, respectively. In the case of regular TJS lasers grown by MBE, the pulsed and cw I/sub th/'s are 37--50 and 40--54 mA, respectively.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5619151
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 36:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
BEAMS
CAVITIES
CRYSTAL GROWTH
DESIGN
DIMENSIONS
EPITAXY
FABRICATION
JUNCTIONS
LASERS
LAYERS
MOLECULAR BEAMS
OSCILLATION MODES
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THICKNESS
WAVELENGTHS