Formation of buried nitride layers in (110) silicon

Conference · Thu Jan 01 04:00:00 EST 1987

OSTI ID:5618882

Datye, A K; Kaushik, V S; Kendall, D L; Martinez-Tovar, B; Myers, D R

High fluence ion implantation of N/sup +/ (1 x 10/sup 18//cm/sup 2/ at 150 keV) has been used to form buried nitride layers in (110) silicon. After annealing at 1200 C for 5 h, a continuous polycrystalline alpha-silicon nitride layer (200 nm thick) is observed beneath a surface silicon film 150 nm thick. The upper Si/Si/sub 3/N/sub 4/ interface appears to be more abrupt than that observed in (100) silicon with minimal dendritic intergrowth and no evidence for microtwinning in the silicon. Furthermore, a bond of nitride precipitates can be detected 500 nm below the continuous nitride layer. These nitride precipitates grow semi-coherently within the silicon with no observable strain or misfit dislocations within the silicon. The nitride precipitates are internally faulted to accommodate the 10% lattice mismatch in the (0001) nitride direction. Short-term anneals reveal that the precipitates have fully crystallized within 10 min. at 1200 C while the continuous nitride layer is still amorphous. 11 refs., 3 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA); New Mexico Univ., Albuquerque (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5618882
• Report Number(s): SAND-87-1586C; CONF-871124-42; ON: DE88003255
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
ANNEALING
CHANNELING
CHARGED PARTICLES
CRYSTAL STRUCTURE
CRYSTALLIZATION
ELECTRON MICROSCOPY
ELEMENTS
HEAT TREATMENTS
INTERFACES
ION IMPLANTATION
IONS
LAYERS
MATERIALS
MICROSCOPY
MICROSTRUCTURE
NITRIDES
NITROGEN COMPOUNDS
NITROGEN IONS
P-TYPE CONDUCTORS
PHASE TRANSFORMATIONS
PNICTIDES
SEGREGATION
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
TRANSMISSION ELECTRON MICROSCOPY