Coherent precipitation of silicon nitride in silicon

Journal Article · Mon May 23 04:00:00 EDT 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99722· OSTI ID:5220266

Kaushik, V S; Datye, A K; Kendall, D L; Martinez-Tovar, B; Myers, D R

Coherent growth of ..cap alpha..-Si/sub 3/N/sub 4/ precipitates is observed in a silicon matrix after implantation of 150 keV N/sup +/ at a dose of 1 x 10/sup 18//cm/sup 2/ into (110) silicon. The near-channeling conditions lead to a band of discrete precipitates, 0.5 ..mu..m below the continuous, polycrystalline buried nitride layer. No misfit dislocations or strain contrast were observed in the silicon matrix despite a 10% lattice mismatch along the Si/sub 3/ N/sub 4/ (0001) direction and a 1% mismatch along directions perpendicular to (0001). The mismatch appears to be accommodated entirely within the precipitate by a mosaic structure consisting of single-crystal subunits, coherent with Si at the Si/sub 3/ N/sub 4/ (0001)/Si)111) interface, but incoherent perpendicular to these planes.

• Research Organization: Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131
• OSTI ID: 5220266
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:21; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
CRYSTAL STRUCTURE
ELEMENTS
ENERGY RANGE
IMPURITIES
ION IMPLANTATION
KEV RANGE
KEV RANGE 100-1000
MICROSTRUCTURE
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
PRECIPITATION
SEMIMETALS
SEPARATION PROCESSES
SILICON
SILICON COMPOUNDS
SILICON NITRIDES