Kinetics of silicon nitride crystallization in N/sup +/-implanted silicon

Journal Article · Wed Mar 01 04:00:00 EST 1989 · J. Mat. Res.; (United States)

OSTI ID:6293686

Kaushik, V S; Datye, A K; Kendall, D L; Martinez-Tovar, B; Simons, D S; Myers, D R

Implantation of nitrogen at 150 KeV and a dose of 1 x 10/sup 18//cm/sup 2/ into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si/sub 3/N/sub 4/ layer after annealing for 1 h at 1200 /sup 0/C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1 ..mu..m below the wafer surface) in less than 1 min at this temperature. The areal density of these precipitates is 5 x 10/sup 7//cm/sup 2/ compared with a nuclei density of 1.6 x 10/sup 5//cm/sup 2/ in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of ..cap alpha..--Si/sub 3/N/sub 4/.

• Research Organization: Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131
• OSTI ID: 6293686
• Journal Information: J. Mat. Res.; (United States), Journal Name: J. Mat. Res.; (United States) Vol. 4:2; ISSN JMREE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
AMORPHOUS STATE
ANNEALING
CHARGED PARTICLES
CRYSTALLIZATION
CRYSTALS
DOSE RATES
DYNAMICS
ELECTRON MICROSCOPY
ELEMENTS
EMISSION
ENERGY RANGE
HEAT TREATMENTS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
LAYERS
MASS SPECTRA
MECHANICS
MICROSCOPY
MORPHOLOGY
NITRIDES
NITROGEN COMPOUNDS
NITROGEN IONS
PHASE TRANSFORMATIONS
PNICTIDES
POLYCRYSTALS
QUANTITY RATIO
RECRYSTALLIZATION
SECONDARY EMISSION
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SPECTRA