Examination of thin SiO sub 2 films on Si using spectroscopic polarization modulation ellipsometry

Journal Article · Sat Jun 01 04:00:00 EDT 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.347532· OSTI ID:5616377

Jellison, Jr, G E ^[1]

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1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6056 (USA)

A series of SiO{sub 2} films with thicknesses varying from 3 to 325 nm have been grown on silicon using standard dry oxygen growth techniques and examined using the two-channel polarization modulation ellipsometer, which has increased sensitivity for very thin insulating films on silicon. Using a biased estimator fitting technique, the ellipsometric data are fit to either an air-SiO{sub 2}-Si model or an air-SiO{sub 2}-interface-Si model, where the optical functions of the SiO{sub 2} layer are approximated using an isotropic one-term Sellmeier approximation. The results from the one-term Sellmeier approximation show that the refractive index of the SiO{sub 2} layer increases with decreasing film thickness, while the interfacial layer thickness decreases with decreasing film thickness.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5616377
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:11; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CHALCOGENIDES
DEPOSITION
ELEMENTS
ELLIPSOMETRY
MEASURING METHODS
MINERALS
NATIONAL ORGANIZATIONS
OPTICAL PROPERTIES
ORNL
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
POLARIZATION
REFRACTIVITY
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SORPTIVE PROPERTIES
SURFACE PROPERTIES
US AEC
US DOE
US ERDA
US ORGANIZATIONS