Two-channel spectroscopic polarization modulation ellipsometry: A new technique for the analysis of thin SiO2 films

Jellison, Jr., G. E.

doi:10.1016/0040-6090(91)90438-4

Two-channel spectroscopic polarization modulation ellipsometry: A new technique for the analysis of thin SiO₂ films

Conference · Thu Sep 05 04:00:00 EDT 2002 · Thin Solid Films

DOI:https://doi.org/10.1016/0040-6090(91)90438-4· OSTI ID:6071148

Jellison, Jr., G. E. ^[1]

Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

A new spectroscopic ellipsometer is described, where the incoming light is dynamically polarized using a photoelastic modulator, and the reflected light is separated into orthogonally polarized beams using a Wollaston prism. Both beams are detected using photomultiplier tubes whose bias voltage is dynamically controlled for constant d.c. All three of the associated ellipsometry parameters (N = cos 2ψ, S = sin 2ψ sinΔ, C= sin 2ψcosΔ) can be determined simultaneously in a single scan s40–840 – nm or 5.16–147 eV). This instrument was used to study the optical properties of thin SiO₂ films from 3 to 325 nm in thickness. Using a biased estimator fitting technique, the raw ellipsometric data can be fitted to an air-SiO₂-interface-Si model, where the optical functions of the SiO₂ layer and the interface region are approximated using one-term Sellmeier approximation Sellmeier approximation, and a 50% SiO₂ Bruggeman effective medium approximation respectively. The refractive index of the SiO₂ layer is dependent on film thickness, increasing with decreasing film thickness, but always being greater than that of fused quartz. The thickness of the interfacial region increases with increasing film thickness, being less than 0.2 nm for film thickness less than 20 nm.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

DOE Contract Number:: AC05-84OR21400

OSTI ID:: 6071148

Report Number(s):: CONF-9104187--1; ON: DE91010131

Conference Information:: Journal Name: Thin Solid Films Journal Issue: 1-2 Journal Volume: 206

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
440600 -- Optical Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
CHALCOGENIDES
DATA
DATA PROCESSING
DIMENSIONS
ELEMENTS
ELLIPSOMETERS
ELLIPSOMETRY
EXPERIMENTAL DATA
FILMS
INFORMATION
INTERFACES
MEASURING INSTRUMENTS
MEASURING METHODS
NUMERICAL DATA
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
POLARIMETERS
POLARIZATION
PROCESSING
REFRACTIVITY
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SUBSTRATES
THICKNESS
THIN FILMS
USES

Two-channel spectroscopic polarization modulation ellipsometry: A new technique for the analysis of thin SiO2 films

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References (16)

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Two-channel spectroscopic polarization modulation ellipsometry: A new technique for the analysis of thin SiO₂ films