Ion channeling and spectroscopic ellipsometry examinations of thin-film SiO{sub 2}/epi-Si structures

Conference · Wed Apr 01 04:00:00 EST 1992

OSTI ID:10150147

Fiory, A T ^[1]; Roy, P K ^[2]; Jellison, Jr, G E ^[3]

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1. AT and T Bell Labs., Murray Hill, NJ (United States)
2. AT and T Bell Labs., Allentown, PA (United States)
3. Oak Ridge National Lab., TN (United States)

Rutherford backscattering ion-channeling spectrometry (RBS) and 2- channel spectroscopic polarization modulation ellipsometry (2-C SPME) were combined in a study of 3- to 16-nm SiO{sub 2} films to discern possible differences between conventional MOS oxides, modified surface preparation, and stack-oxide processes which combine chemical vapor deposition with furnace oxidation. An excess silicon scattering is observed by RBS, which suggests atomic displacements associated with interfacial roughness and strain in the crystalline Si. Ellipsometry observes an increase in refractive index with decreasing film thickness, which is consistent with interfacial roughness or Si strain. The various preparation methods for device-quality MOS oxides yielded essentially equivalent results and film densities close to bulk, fused SiO{sub 2}.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 10150147
• Report Number(s): CONF-920402--24; ON: DE92015129
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202
ELLIPSOMETRY
ION SPECTROSCOPY
OXIDATION
REFRACTIVE INDEX
ROUGHNESS
SAMPLE PREPARATION
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
STRUCTURE AND PHASE STUDIES
SURFACE PROPERTIES
THICKNESS