SiO{sub x} layer formation during plasma sputtering of Si and SiO{sub 2} targets

Journal Article · Sun Jun 15 04:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1134/S106378260806016X· OSTI ID:21255656

Karpov, A N ^[1]; Marin, D V; Volodin, V A ^[2]; Jedrzejewski, J ^[3]; Kachurin, G A ^[2]; Savir, E ^[3]; Yanovitskaya, Z Sh ^[2]; Balberg, I; Goldstein, Y ^[3]

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1. Novosibirsk State University (Russian Federation)
2. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
3. Hebrew University, Racah Institute of Physics (Israel)

Deposition of SiO{sub x} layers of variable composition onto silicon wafers was performed by co-sputtering of spaced Si and SiO{sub 2} targets in argon plasma. Coordinate dependences of the thickness and refractive index of separately deposited Si and SiO{sub 2} layers and the SiO{sub x} layer grown during co-sputtering of targets were determined using optical techniques. It was shown that the SiO{sub x} layer composition is not equal to a simple sum of thicknesses of separately deposited Si and SiO{sub 2} layers. The coordinate dependences of the Si and SiO{sub 2} layer thicknesses were calculated. To fit the calculated and experimental data, it is necessary to assume that no less than 10% of silicon is converted to dioxide during co-sputtering. A comparison of the coordinate dependences of the IR absorbance in SiO{sub 2} and SiO{sub x} layers with experimental ellipsometric data confirmed the presence of excess oxygen in the SiO{sub x} layer. Taking into account such partial oxidation of sputtered silicon, composition isolines in the substrate plane were calculated. After annealing of the SiO{sub x} layer at 1200{sup o}C, photoluminescence was observed in a wafer area predicted by calculations, which was caused by the formation of quantum-size Si nanocrystallites. The photoluminescence intensity was maximum at x = 1.78 {+-} 0.3, which is close to the composition optimum for ion-beam synthesis of nanocrystals.

• OSTI ID: 21255656
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 42; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARGON
COORDINATES
DEPOSITION
ION BEAMS
LAYERS
NANOSTRUCTURES
OXIDATION
PHOTOLUMINESCENCE
REFRACTIVE INDEX
SILICON
SILICON OXIDES
SPUTTERING
SYNTHESIS