Investigation of radiation defects in silicon bombarded with 20 MeV protons

Journal Article · Tue Dec 01 00:00:00 EST 1981 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:5612682

Yunusov, M; Makhkamov, S; Mirzaev, A; Muratov, Z

A study was made of the influence of irradiation with 20 MeV protons on the properties of n-type silicon with an initial resistivity from 0.3 to 20 ..cap omega.. x cm. The parameters of the newly formed radiation defects were determined by the thermally stimulated capacitance and photocapacitance methods using previously prepared p/sup +/-n diode structures. The temperature dependence of the rate of thermal ionization of electrons and the photocapacitance spectrum indicated that irradiation of n-type silicon with a proton dose of approx.10/sup 14/ cm/sup -2/ produced mainly four levels with ionization energies E/sub c/-0.17, E/sub c/-0.31, E/sub c/-0.46, and E/sub v/+0.32 eV. The experimental results (ionization energies of the levels, thermal ionization cross sections of the majority carriers, rates of introduction of radiation defects, etc.) indicated that the E/sub c/-0.46 eV level was associated with the E centers, E/sub c/-0.31 eV was due to divacancy-phosphorus complexes, and E/sub c/-0.17 eV was due to complexes larger than the A centers.

• Research Organization: Institute of Nuclear Physics, Academy of Sciences of the Uzbek SSR, Tashkent
• OSTI ID: 5612682
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Vol. 15:12
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHYSICAL RADIATION EFFECTS
COLOR CENTERS
CROSS SECTIONS
CRYSTAL DEFECTS
ENERGY LEVELS
IONIZATION
MEV RANGE 10-100
N-TYPE CONDUCTORS
PROTONS
BARYONS
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
FERMIONS
HADRONS
MATERIALS
MEV RANGE
NUCLEONS
POINT DEFECTS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS
VACANCIES
360605* - Materials- Radiation Effects