Elevated temperature annealing of the neutron induced reverse current and corresponding defect levels in low and high resistivity silicon detectors

Journal Article · Tue Aug 01 04:00:00 EDT 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.467814· OSTI ID:129155

Eremin, V; Ivanov, A; Verbitskaya, E ^[1]; Li, Z; Kraner, H W ^[2]

---

1. Academy of Sciences of Russia, St. Petersburg (Russian Federation). A.F. Ioffe Physico-Technical Institute
2. Brookhaven National Lab., Upton, NY (United States)

A new aspect of degradation phenomena of neutron irradiated silicon detectors has been revealed which consists in the significant influence of carbon related defect transformation on the detector reverse current (I{sub rev}). The annealing of the reverse current at elevated temperatures and the corresponding changes of the deep level transient spectroscopy (DLTS) spectra of defects for fast neutron irradiated silicon detectors, fabricated on high (4--6) k{Omega}-cm, moderate (0.5--1.0 k{Omega}-cm) and low (<100 {Omega}-cm) resistivity silicon material have been investigated. For all resistivity silicon detectors studied in this work, three annealing stages of the defects with deep levels in the energy band gap have been observed: (1) the transformation of carbon related defects in the temperature range of 20--72 C; (2) decrease of the peak E{sub c}{minus}0.4 eV at 150 C, and (3) complete annealing of the peak e{sub c}{minus}0.4 eV at 350 C. The transformations of carbon related defects consisted in the annealing of interstitial carbon (C{sub i}) and simultaneous generation of C{sub i}-O{sub i} complex and was accompanied by a significant reduction of the reverse current. The decrease of the peak E{sub c} {minus} 0.4 eV was observed in the temperature range of 72--350 C and was affected by both the annealing of the E-center (V-P complex) and single minus charge state of divacancy (VV) and by the changes in the filling of the deep levels in high or moderate resistivity Si. The results show the comparable role of the V-P complex and VV-center in formation of E{sub c} {minus} 0.4 eV defect in high and moderate resistivity silicon.

• OSTI ID: 129155
• Report Number(s): CONF-941061--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 4Pt1 Vol. 42; ISSN IETNAE; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANNEALING
CERN LHC
CRYSTAL DEFECTS
ELECTRICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
SHOWER COUNTERS
SI SEMICONDUCTOR DETECTORS
TEMPERATURE DEPENDENCE