Elevated temperature annealing of the neutron induced leakage current and corresponding defect levels in low and high resistivity silicon detectors

Conference · Tue Mar 01 04:00:00 EST 1994

OSTI ID:10159464

Eremin, V; Ivanov, A; Verbitskaya, E ^[1]; Li, Z; Kraner, H W ^[2]

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1. A.F. Ioffe Physico-Technical Institute of Academy of Sciences of Russia, St. Petersburg, (Russian Federation)
2. Brookhaven National Lab., Upton, NY (United States)

The leakage current (I{sub L}) annealing at the elevated temperatures and the corresponding changes of the DLTS spectra of defects for fast neutron irradiated Silicon detectors, fabricated on high (4--6 k{Omega}-cm), moderate (0.5--1.0 k{Omega}-cm), and low(<100 {Omega}-cm) resistivity silicon material, have been investigated. For all the resistivities, three annealing stages have been observed: (1) The transformation of carbon related defects at 72{degree}C; (2) slight decrease of the peak E{sub c} {minus} 0.4 eV at 150{degree}C; and (3) significant decrease of the peak E{sub c} {minus} 0.4 eV at 350{degree}C. The leakage current has been found to decrease monotonously in the temperature range of 20--150{degree}C. A sharp decrease of I{sub L} was observed at 350 {degree}C due to the annealing of the V-V{sup {minus}} center for heavily irradiated detectors, whereas I{sub L} showed a slight saturation tendency for detectors irradiated to low neutron fluence. The V-V{sup {minus}} center has been found to be dominant in the formation of the E{sub c} {minus} 0.4 eV peak and in the annealing of the leakage current. For low resistivity detectors, an anneal at 72{degree}C was needed to stimulate the decrease of the effective impurity concentration (N{sub eff}) of the detectors irradiated by high neutron fluence (1--2) {times} 10{sup 14} n/cm{sup 2}. In addition, low resistivity detectors have been found to be tolerant in terms of N{sub eff} stability to the 350{degree}C anneal, favorable to the recovery of I{sub L} after irradiation with high neutron fluence.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 10159464
• Report Number(s): BNL--60273; CONF-941061--3; ON: DE94013538
• Country of Publication: United States
• Language: English

Related Subjects

440104
440200
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
DAMAGING NEUTRON FLUENCE
HIGH ENERGY PHYSICS INSTRUMENTATION
LEAKAGE CURRENT
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
SI SEMICONDUCTOR DETECTORS
TEMPERATURE DEPENDENCE