Fast neutron radiation damage effects on high resistivity silicon junction detectors
P{sup +}{minus}n{sup {minus}}{minus}n{sup +} silicon radiation detectors made of high resistivity Si material ({rho} {ge} 2 k{Omega}-cm) were irradiated to a neutron fluence of a few times of 10{sup 13} n/cm{sup 2}. Dependence of detector leakage current, reverse bias capacitance, and effective doping concentration of the Si substrate on the neutron fluence have been systematically studied. It has been found that the detector leakage current increases linearly with neutron fluence in the range studies, with a damage constant of {alpha} = 9 {times} 10{sup {minus}17} A/cm ({Delta}I = {alpha}V{Delta}{phi}{sub n}), and the C-V characteristics of detectors irradiated to {phi}{sub n} > 10{sup 12} n/cm{sup 2} become frequency dependent. Models using several defect levels in the band gap are proposed to describe the frequency dependent C-V effects and the electrical field profiles after high neutron fluence irradiation.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 5537502
- Report Number(s):
- BNL-46198-Rev.; CONF-9109329--2; ON: DE92010131
- Country of Publication:
- United States
- Language:
- English
Similar Records
Changes in electrical properties of high resistivity silicon caused by fast neutron damage
Changes in electrical properties of high resistivity silicon caused by fast neutron damage
Related Subjects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BARYONS
CAPACITANCE
CHALCOGENIDES
CURRENTS
DAMAGING NEUTRON FLUENCE
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
FAST NEUTRONS
FERMIONS
FREQUENCY DEPENDENCE
HADRONS
LEAKAGE CURRENT
MEASURING INSTRUMENTS
NEUTRON FLUENCE
NEUTRONS
NUCLEONS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION DETECTORS
RADIATION EFFECTS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SI SEMICONDUCTOR DETECTORS
SILICON COMPOUNDS
SILICON DIODES
SILICON OXIDES