Fast neutron radiation damage effects on high resistivity silicon junction detectors. Revision

Conference · Tue Dec 31 23:00:00 EST 1991

OSTI ID:10132155

Li, Zheng; Kraner, H W

P{sup +}{minus}n{sup {minus}}{minus}n{sup +} silicon radiation detectors made of high resistivity Si material ({rho} {ge} 2 k{Omega}-cm) were irradiated to a neutron fluence of a few times of 10{sup 13} n/cm{sup 2}. Dependence of detector leakage current, reverse bias capacitance, and effective doping concentration of the Si substrate on the neutron fluence have been systematically studied. It has been found that the detector leakage current increases linearly with neutron fluence in the range studies, with a damage constant of {alpha} = 9 {times} 10{sup {minus}17} A/cm ({Delta}I = {alpha}V{Delta}{phi}{sub n}), and the C-V characteristics of detectors irradiated to {phi}{sub n} > 10{sup 12} n/cm{sup 2} become frequency dependent. Models using several defect levels in the band gap are proposed to describe the frequency dependent C-V effects and the electrical field profiles after high neutron fluence irradiation.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 10132155
• Report Number(s): BNL--46198-Rev.; CONF-9109329--2; ON: DE92010131
• Country of Publication: United States
• Language: English

Related Subjects

440104
440200
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CAPACITANCE
DAMAGING NEUTRON FLUENCE
FAST NEUTRONS
FREQUENCY DEPENDENCE
HIGH ENERGY PHYSICS INSTRUMENTATION
LEAKAGE CURRENT
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
SI SEMICONDUCTOR DETECTORS
SILICON DIODES
SILICON OXIDES