Changes in electrical properties of high resistivity silicon caused by fast neutron damage
Conference
·
OSTI ID:10113813
P{sup +}{minus}n{sup {minus}}{minus}n{sup +} silicon radiation detectors made of high resistivity Si material ({rho} {ge} 2 k{Omega}-cm) were irradiated to a neutron fluence of a few times of 10{sup 13} n/cm{sup 2}. Dependence of detector leakage current, reverse bias capacitance, and effective doping concentration of the Si substrate on the neutron fluence have been systematically studied. Models using several defect levels in band gap describing the frequency dependent C-V effect and electrical field profile at high neutron fluence ({phi}{sub n} > 10{sup 13} n/cm{sup 2}) are proposed in this study. 3 refs.
- Research Organization:
- Brookhaven National Lab., Upton, NY (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 10113813
- Report Number(s):
- BNL--46198; CONF-9109329--1; ON: DE92005035
- Country of Publication:
- United States
- Language:
- English
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