Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7{times}10{sup 15} n/cm{sup 2}
Journal Article
·
· IEEE Transactions on Nuclear Science
- Brookhaven National Lab., Upton, NY (United States)
- Univ. of Hamburg (Germany)
Current-based microscopic defect analysis methods with optical filling techniques, namely current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC), have been used to study defect levels in a high resistivity silicon detector (p{sup +}-n-n{sup +}) induced by very high fluence neutron (VHFN) irradiation. As many as fourteen deep levels have been detected by I-DLTS. Arrhenius plots of the I-DLTS data have shown defects with energy levels ranging from 0.03 eV to 0.5 eV in the energy band gap. Defect concentrations of relatively shallow levels are in the order of 10{sup 13}cm{sup {minus}3}, while those for relatively deep levels are in the order of 10{sup 14} cm{sup {minus}3}. TSC data have shown similar defect spectra. A full depletion voltage of about 27,000 volts has been estimated by C-V measurements for the as-irradiated detector, which corresponds to an effective space charge density (N{sub eff}) in the order of 2 {times} 10{sup 14} cm{sup {minus}3}. Both detector leakage current and full depletion voltage have been observed to increase with elevated temperature annealing (ETA). The increase of the full depletion voltage corresponds to the increase of some deep levels, especially the 0.39 eV level. Results of positron annihilation spectroscopy have shown a decrease of total concentration of vacancy related defects including vacancy clusters with ETA, suggesting the breaking up of vacancy clusters as possible source of vacancies for the formation of single defects during the reverse anneal.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 276444
- Report Number(s):
- CONF-951073--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature stimulated reverse annealing of neutron induced damage in high resistivity silicon detectors
Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy
Elevated temperature annealing of the neutron induced reverse current and corresponding defect levels in low and high resistivity silicon detectors
Conference
·
Tue Feb 28 23:00:00 EST 1995
·
OSTI ID:90104
Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy
Conference
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:512972
Elevated temperature annealing of the neutron induced reverse current and corresponding defect levels in low and high resistivity silicon detectors
Journal Article
·
Tue Aug 01 00:00:00 EDT 1995
· IEEE Transactions on Nuclear Science
·
OSTI ID:129155