Interface recombination and carrier confinement at a GaAs/Ga/sub x/In/sub 1-x/P double heterojunction studied by picosecond population modulation spectroscopy
Sensitive picosecond excite-probe modulation methods have been applied to study electron-hole confinement and interface lifetime in a molecular beam epitaxy (MBE) grown n-type Ga/sub x/In/sub 1-x/P/ GaAs/Ga/sub x/In/sub 1-x/P double heterojunction. Time-varying transmission spectra at 77 K have been examined near the E/sub 0/+..delta../sub 0/ transition in GaAs and near the fundamental edge in Ga/sub x/In/sub 1-x/P (x = 0.47), following the injection of a small electron-hole population. We demonstrate directly the confining efficiency of the structure for electrons and, consistent with other recent evidence, find that the interface recombination velocity in the relatively strain-free heterostructure is reduced to less than 1 x 10/sup 4/ cm/s from the value of 5 x 10/sup 5/ cm/s for a free GaAs surface. The latter has been determined by us directly from time-resolved reflection spectra which suggest further applications of these methods to surface spectroscopy of semiconductors.
- Research Organization:
- Division of Engineering, Brown University, Providence, Rhode Island 02912
- OSTI ID:
- 5610435
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 40:10
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
EPITAXY
CHARGE CARRIERS
CONFINEMENT
ELECTRONS
EXCITATION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
HOLES
INDIUM PHOSPHIDES
INTERFACES
LIFETIME
LOW TEMPERATURE
MOLECULAR BEAMS
PROBES
RECOMBINATION
SPECTROSCOPY
TIME DEPENDENCE
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
DATA
ELEMENTARY PARTICLES
ENERGY-LEVEL TRANSITIONS
FERMIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
LEPTONS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)