Deep level luminescence of GaAs-Ga/sub 1hyphenx/Al/sub x/AS double heterojunction laser

Journal Article · Thu Jul 01 00:00:00 EDT 1982 · Chin. Phys.; (United States)

OSTI ID:5339975

Wang, S; Wang, Z; Xu, J

The luminescence spectra at various spatial positions perpendicular to the junction plane of a DH laser has been studied. For certain wavelength the spatial distribution of the luminescence was also investigated. The experimental results show that the deep level radiation peaks at wavelength of 1.03 ..mu.. and 1.09 ..mu.. (called D/sub 1/ and D/sub 2/) appeared throughout the region of N-GaAs substrate, N-GaAs buffer layer and P-GaAs active layer. The intensity of those peaks became maximum in the buffer layer nearby the active region about 3--6 ..mu..m away from the N-n heterojunction. Under enhanced aging with lower current density (heat sink temperature 70 /sup 0/C, current density 500 A/cm/sup 2/) the intensity of the two radiation peaks slightly increased and the position of maximum moves toward N-n heterojunction, but after thermal treatment at 800 /sup 0/C the intensity of the two peaks evidently decreased. Besides it was discovered that there was also a deep level radiation peak, however, would not be affected by the thermal treatment, and during enhanced aging with lower current density the intensity of it significantly reduced, which agrees with the fact that the threshold current density decreases in the early period of the aging process. It was also found that the luminescence spectrum of N-Ga/sub 1-x/Al/sub x/ As layer has a radiation peak, whose wavelength is shorter than that of the band to band transition in the active region. It can be considered that this radiation peak results from the recombination of the holes bound by Sn deep acceptor with the electrons, which appeared in N-Ga/sub 1-x/Al/sub x/ As layer due to the existence of the potential barriers in the conduction band at N-p heterojunctions.

• Research Organization: Institute of Semiconductors, Chinese Academey of Sciences
• OSTI ID: 5339975
• Journal Information: Chin. Phys.; (United States), Vol. 2:3
• Country of Publication: United States
• Language: English

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