The recombination velocity at iii-v compound heterojunctions with applications to Al /sub x/ Ga/sub 1-x/As-GaAs/sub 1-y/Sb/sub y/

Technical Report · Mon May 01 00:00:00 EDT 1978

OSTI ID:6498126

Kim, J S

Interface recombination velocity in Al/sub x/Ga/sub 1-x/As-GaAs and A1/sub 0/ /sub 85/ Ga/sub 0/ /sub 15/As-GaAs/sub 1-y/Sb/sub y/ heterojunction systems was studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAsSb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates.

• Research Organization: Stanford Univ., CA (USA). Solid-State Electronics Labs.
• OSTI ID: 6498126
• Report Number(s): N-78-25544; NASA-CR-157181; SU-SEL-78-014
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
GALLIUM ARSENIDE SOLAR CELLS
DESIGN
GALLIUM ARSENIDES
ANTIMONY COMPOUNDS
EPITAXY
MONOCRYSTALS
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTALS
DIRECT ENERGY CONVERTERS
GALLIUM COMPOUNDS
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SOLAR CELLS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture