Low energy proton radiation damage to (AlGa)As-GaAs solar cells. Final report, 5 Jul 1978 - 5 Jan 1979

Technical Report · Mon Jan 01 04:00:00 EST 1979

OSTI ID:5595247

Loo, R; Kamath, S; Knechtli, R

Twenty-seven 2 times 2 sq cm (AlGa)As-GaAs solar cells were fabricated and subjected to 50 keV, 100 keV, and 290 keV of proton irradiation along with eighteen high efficiency silicon solar cells. The results of the study further corroborate the advantages for space missions offered by GaAs cells over state of the art silicon cells. Thus, even though the GaAs cells showed greater degradation when irradiated by protons with energy less than 5 MeV, the solar cells were normally protected from these protons by the glass covers used in space arrays. The GaAs cells also offered superior end of life power capability compared with silicon. The change in the open circuit voltage, short circuit current, spectral response, and dark 1-5 characteristics after irradiation at each proton energy and fluence were found to be consistent with the explanation of the effect of the protons. Also dark 1-5 characteristics showed that a new recombination center dominates the current transport mechanism after irradiation.

• Research Organization: Hughes Research Labs., Malibu, CA (USA)
• OSTI ID: 5595247
• Report Number(s): N-79-25507
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
COVERINGS
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
ENERGY RANGE
EQUIPMENT
FERMIONS
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
KEV RANGE
KEV RANGE 10-100
KEV RANGE 100-1000
NUCLEONS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTONS
RADIATION EFFECTS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRAL RESPONSE