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High energy proton radiation damage to (AlGa)As-GaAs solar cells. Final report, 23 Nov 1976 - 15 Oct 1977

Technical Report ·
OSTI ID:5398267
; ; ;
Twelve 2 + 2 sq cm (AlGa)As-GaAs solar cells were fabricated and were subjected to 15.4 and 40 MeV of proton irradiation. The results showed that the GaAs cells degrade considerably less than do conventional and developmental K7 silicon cells. The detailed characteristics of the GaAs and silicon cells, both before and after irradiation, are described. Further optimization of the GaAs cells seems feasible, and areas for future work are suggested.
Research Organization:
Hughes Research Labs., Malibu, CA (USA)
OSTI ID:
5398267
Report Number(s):
N-79-24261
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
DIRECT ENERGY CONVERTERS
ELEMENTARY PARTICLES
ENERGY RANGE
EQUIPMENT
FERMIONS
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
MEV RANGE
MEV RANGE 10-100
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTONS
RADIATION EFFECTS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT