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Electronic properties of deep-level defects in proton irradiated algaas-gaas solar cells. Final report, 1 September 1977 - 31 August. 1981

Technical Report ·
OSTI ID:5766236
Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.
Research Organization:
Florida Univ., Gainesville (USA)
OSTI ID:
5766236
Report Number(s):
NASA-CR-164666
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BARYONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
GALLIUM ARSENIDE SOLAR CELLS
HADRONS
NUCLEONS
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PROTONS
RADIATION EFFECTS
RECOMBINATION
SOLAR CELLS
SOLAR EQUIPMENT