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U.S. Department of Energy
Office of Scientific and Technical Information

Method for forming refractory resistors with etch stop for superconductor integrated circuits

Patent ·
OSTI ID:5589246
This paper describes a method for preparing molybdenum resistors in a superconductor integrated circuit. It comprises: depositing superconductor film on a support; patterning the superconductor film to provide a patterned superconductor and exposed support; applying an titanium film on the superconductor film and the exposed support; applying a molybdenum film on the titanium film to provide an titanium-molybdenum, etch-stop interface; applying a patterned resist film on the molybdenum film to provide exposed molybdenum film and unexposed molybdenum film; etching the exposed molybdenum film to define the molybdenum resistor and expose a portion of the titanium-molybdenum, etch-stop interface; and oxidizing the exposed titanium-molybdenum, etch-stop interface, whereby the titanium-molybdenum, etch-stop interface protects the patterned superconductor film and the support and increases processing margins for the etch time.
Assignee:
Westinghouse Electric Corp., Pittsburgh, PA (United States)
Patent Number(s):
A; US 5069748
Application Number:
PPN: US 7-644131
OSTI ID:
5589246
Country of Publication:
United States
Language:
English