Orientation-dependent metalorganic vapor phase epitaxy regrowth on GaInAsP/InP laser structures

Journal Article · Mon Sep 25 00:00:00 EDT 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101643· OSTI ID:5572021

Fidorra, F; Harde, P; Venghaus, H ^[1]; Grutzmacher, D ^[2]

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1. Heinrich-Hertz-Institut fuer Nachrichtentechnik GmbH, Einsteinufer 37, D-1000 Berlin 10, Federal Republic of Germany (DE)
2. Institute of Semiconductor Electronics, Aachen Technical University, Sommerfeldstrasse, D-5100 Aachen, Federal Republic of Germany

GaInAsP/InP lasers made by low-pressure metalorganic vapor phase epitaxy regrowth on patterned surfaces exhibit yield and performance dependent on laser stripe orientation. Structures with stripes parallel to the {l angle}011{r angle} and {l angle}0{bar 1}1{r angle} directions are investigated by secondary ion mass spectroscopy (SIMS). Three-dimensional SIMS profiles taken with high horizontal resolution using the checkerboard matrix gate technique yield unexpected results for structures with stripes parallel to the {l angle}0{bar 1}1{r angle} direction: phosphorus is found in the nominal GaInAs layer, its distribution is strongly inhomogeneous. Zn diffused into the GaInAs layer exhibits also pronounced spatial variations. Unwanted P outdiffusion and anomalous Zn diffusion are attributed to reduced crystalline perfection of the InP above {l angle}0{bar 1}1{r angle} oriented laser stripes.

• OSTI ID: 5572021
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:13; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
CRYSTAL STRUCTURE
DATA
DIFFUSION
ELEMENTS
EPITAXY
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFORMATION
LASERS
MASS SPECTROSCOPY
METALS
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
NUMERICAL DATA
PERFORMANCE
PHOSPHORUS
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTROSCOPY
SURFACE FINISHING
VAPOR PHASE EPITAXY
ZINC