Excess noise design of InP/GaInAsP/GaInAs avalanche photodiodes
Journal Article
·
· IEEE J. Quant. Electron.; (United States)
An InP/GaInAsP/GaInAs avalanche photodiode (APD) with separate absorption and multiplication (SAM) regions has been designed taking into account the excess noise generated in GaInAsP and GaInAs. The multiplication factor dependence of the excess noise factor F has been calculated using realistic electron and hole ionization rates in InP, GaInAsP, and GaInAs, assuming that the avalanche multiplication occurs not only in InP but in GaInAsP and GaInAs. The calculated F values have been compared to the experimental ones measured on a planar-type InP/GaInAsP/GaInAs APD for illumination at a wavelength of 1.3 ..mu..m. It has been found the calculated excess noise agrees very well with the experimental measurements. The limited ranges of device parameters in which the conditions of minimal excess noise, tunneling current, and charge pile-up are satisfied have been obtained. The authors conclude that the excess noise generated in GaInAsP and GaInAs should be considered in a practical device design.
- Research Organization:
- Fujitsu Labs. Ltd., Atsugi
- OSTI ID:
- 5861737
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-22:3; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ABSORPTIVITY
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTRIC DISCHARGES
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HOLES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IONIZATION
LEPTONS
MULTIPLICATION FACTORS
NOISE
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODIODES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TOWNSEND DISCHARGE
TUNNEL EFFECT
WAVELENGTHS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ABSORPTIVITY
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTRIC DISCHARGES
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HOLES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IONIZATION
LEPTONS
MULTIPLICATION FACTORS
NOISE
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODIODES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TOWNSEND DISCHARGE
TUNNEL EFFECT
WAVELENGTHS