Avalanche buildup time of an InP/InGaAsP/InGaAs APD at high gain

Journal Article · Fri Sep 01 04:00:00 EDT 1989 · IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA)

DOI:https://doi.org/10.1109/3.35229· OSTI ID:5732296

Hsieh, H C; Sargeant, W ^[1]

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1. Iowa State Univ. of Science and Technology, Ames, IA (USA). Dept. of Electrical Engineering

Under a high-gain operating condition, the presence of a multiplication process in the InGaAs(P) regions of an InP/InGaAsP/InGaAs avalanche photodiode having a structure of separated absorption and multiplication regions (SAM-APD) could lead to significant enhancement of the avalanche buildup time. As a result, the bandwidth of the device could be reduced considerably. The dependence of the avalanche multiplication factor and the intrinsic response time on the reverse bias voltage, the heterointerface field, the doping concentrations, and the width of the InP layer are examined in detail for the case in which hole injection is assumed. It is shown, for example, that for a fixed value of doping concentrations, the reduction of the excess noise factor and the enhancement of the gain-bandwidth product of the device can be made at the same time by a proper increase of the width of the InP layer.

• OSTI ID: 5732296
• Journal Information: IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA), Journal Name: IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA) Vol. 25:9; ISSN 0018-9197; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
ABSORPTION SPECTRA
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MICROSTRUCTURE
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODIODES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTRA