Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption ''grading'' and multiplication regions

Journal Article · Fri Nov 01 04:00:00 EST 1985 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1985.1072588· OSTI ID:5888045

Campbell, J C; Dentai, A G; Holden, W S; Qua, G J

We have measured the frequency response of InP/ InGaAsP/InGaAs photodiodes with separate absorption, ''grading,'' and multiplication regions (SAGM-APD's) for a wide range (2 less than or equal to M/sub 0/ less than or equal to 35) of dc gains. The results are explained in terms of a theoretical model which incorporates the transit time of carriers through the depletion region, the RC time constant, the accumulation of holes at the valence band discontinuity of the heterojunction interfaces, and the gainbandwidth limit.

• Research Organization: ATandT Bell Laboratories, Holmdel, NJ
• OSTI ID: 5888045
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-21:11; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
CHARGE TRANSPORT
DEPLETION LAYER
FREQUENCY RESPONSE TESTING
FUNCTIONS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LAYERS
MATHEMATICAL MODELS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODIODES
PNICTIDES
RESPONSE FUNCTIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
TESTING