Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes

Journal Article · Mon May 01 04:00:00 EDT 1989 · Journal of Lightwave Technology; (USA)

DOI:https://doi.org/10.1109/50.19113· OSTI ID:5244249

Campbell, J C; Johnson, B C; Qua, G J; Tsang, W T ^[1]

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1. AT and T Bell Labs., Holmdel, NJ (USA)

The authors present a theoretical model for the frequency response of InP/InGaAsP/InGaAs APD's. Included in the analysis are resistive, capacitive and inductive parasitics, transit-time factors, hole trapping at the heterojunction interfaces, and the avalanche buildup time. The contributions of the primary electrons, primary holes, and secondary electrons to the transit-time-limited response are considered separately. Using a measurement apparatus which consists of a frequency synthesizer and a spectrum analyzer controlled by a microcomputer, the authors measured the frequency response of InP/InGaAsP/InGaAs APD's grown by chemical beam epitaxy. Good agreement with the calculated response has been obtained over a wide range of gains.

• OSTI ID: 5244249
• Journal Information: Journal of Lightwave Technology; (USA), Journal Name: Journal of Lightwave Technology; (USA) Vol. 7:5; ISSN 0733-8724; ISSN JLTED
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360603* -- Materials-- Properties
656001 -- Condensed Matter Physics-- Solid-State Plasma
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CALCULATION METHODS
CHEMICAL COMPOSITION
COMPUTERS
DATA
ELECTRON-HOLE COUPLING
ELECTRONIC CIRCUITS
ELECTRONS
ELEMENTARY PARTICLES
EMISSION SPECTRA
EPITAXY
FERMIONS
FREQUENCY RESPONSE TESTING
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LEPTONS
MEASURING METHODS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
NUMERICAL DATA
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODIODES
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SPECTRA
TESTING
THEORETICAL DATA
TRAPPED ELECTRONS
VAPOR PHASE EPITAXY