Single run etching and regrowth of InP/GaInAsP by GSMBE

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:536267

Gentner, J L; Jarry, P; Goldstein, L ^[1]

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1. Alcatel Alsthom Recherche, Marcoussis (France)

The authors have reported for the first time the successful etching of InP/GaInAsP heterostructures by the chemical beam etching technique using PCl{sub 3}. The kinetics of etching has been studied over a large temperature range. The difference in etch rates between InP and GaInAsP is explained by a difference in the group III chloride stoichiometry (InCl, GaCl{sub 3}). This difference leads probably to a modification of the surface composition during etching, the surface becoming richer in Ga. The dopants (Si, Be) are found to accumulate at the etch/regrown interface. The Silicon atoms are not removed and create a {delta}-doped layer at the regrowth interface. The surface morphology of etched samples have been improved by etching at low temperature, in agreement with the RHEED observations showing a smooth 2D layer by layer etching mode in this case. In particular, the decoration of dislocations observed after etching at high temperature is not found on low temperature etched samples. This low temperature etching procedure is well adapted to the regrowth of high quality InP/GaInAsP structures.

• OSTI ID: 536267
• Report Number(s): CONF-960498--; ISBN 0-7803-3283-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
DOPED MATERIALS
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HALIDES
INDIUM PHOSPHIDES
KINETICS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
TEMPERATURE DEPENDENCE