Dangling bonds and sub-gap optical absorption in silicon

Conference · Tue Jan 01 04:00:00 EST 1985

OSTI ID:5567252

Seager, C H; Lenahan, P M; Brower, K L; Mikawa, R E

The silicon ''dangling bond'' defect plays a large part in controlling the electronic properties of a-Si, polycrystalline silicon, and Si/SiO/sub 2/ interface. Jackson et al. have suggested that transitions of electrons occupying this defect produce the Urbach-like sub-gap absorption tail seen in two of these materials. We have performed optical and electron spin resonance measurements on polycrystalline silicon, plastically deformed silicon, and Si/SiO/sub 2/ interfaces to further examine this contention. In addition to seeing no measurable absorptance due to dangling bond interface states in the latter system, we conclude from the poor correlation of ESR signals with optical data that the Urbach tail in polycrystalline and deformed silicon is not due to transitions of dangling bond electrons.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5567252
• Report Number(s): SAND-84-2287C; CONF-850421-5; ON: DE85011752
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION SPECTRA
CHALCOGENIDES
CHEMICAL REACTIONS
CRYSTALS
DEFORMATION
ELECTRON SPIN RESONANCE
ELEMENTS
HYDROGENATION
MAGNETIC RESONANCE
OXIDATION
OXIDES
OXYGEN COMPOUNDS
POLYCRYSTALS
RESONANCE
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SPECTRA