Optical absorption and dangling bonds in damaged silicon

Journal Article · Tue Oct 01 04:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335908· OSTI ID:5414573

Seager, C H; Lenahan, P M

We have examined the optical absorption and spin-resonance signal characteristics of thin layers of silicon damaged by an abrasive process at room temperature. We find an Urbach-like dependence of the subgap absorption and a g = 2.0055 isotropic spin-resonance signal characteristic of silicon dangling bonds. Changes in the optical and spin-resonance data caused by thermal anneals in air, or in atomic hydrogen, indicate that direct electronic transitions of the dangling bond defect are not responsible for the observed optical-absorption spectra. The doping level dependence of these spectra is consistent with the hypothesis that electronic transitions arising from disorder-induced band-tail states cause the subgap absorption.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5414573
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION SPECTRA
ANNEALING
CHEMICAL BONDS
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
ELECTRON SPIN RESONANCE
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY GAP
FILMS
HEAT TREATMENTS
LAYERS
MAGNETIC RESONANCE
OPACITY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RESONANCE
SEMIMETALS
SILICON
SPECTRA
THIN FILMS
VISIBLE SPECTRA