Dangling bonds and the Urbach tail in silicon

Journal Article · Tue Oct 01 04:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335907· OSTI ID:5321404

Seager, C H; Lenahan, P M; Brower, K L; Mikawa, R E

Electron spin resonance (ESR) and highly sensitive optical-absorption measurements have been performed on plastically deformed silicon, polycrystalline silicon, and high interface state density, oxidized silicon samples. In the first two cases, the response of the Urbach-like subgap optical absorption and the ''dangling bond'' ESR signal following thermal and atomic hydrogen anneals is found to be distinctly different from that reported previously for polycrystalline silicon. These data suggest that transitions of the dangling bond are not responsible for this Urbach-like behavior. In addition, we find that removal of the interfacial silicon dangling bond by oxide stripping results in no measurable sample absorptance decreases, implying a considerably lower optical cross section than has been previously estimated for dangling bonds in the bulk.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5321404
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION SPECTRA
ABSORPTIVITY
ANNEALING
CHEMICAL BONDS
CHEMICAL REACTIONS
CROSS SECTIONS
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
CRYSTALS
ELECTRON SPIN RESONANCE
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY GAP
ENERGY-LEVEL DENSITY
HEAT TREATMENTS
INTERFACES
MAGNETIC RESONANCE
OPACITY
OPTICAL PROPERTIES
OXIDATION
PHYSICAL PROPERTIES
POLYCRYSTALS
RESONANCE
SEMIMETALS
SILICON
SPECTRA
VISIBLE SPECTRA