Si and N dangling bond creation in silicon nitride thin films

Journal Article · Mon Nov 08 04:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.110420· OSTI ID:6082513

Warren, W L ^[1]; Robertson, J ^[2]; Kanicki, J ^[3]

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1. Sandia National Laboratories, Advanced Materials Laboratory, Albuquerque, New Mexico 87106 (United States)
2. National Power Laboratories, Leatherhead, Surrey, KT22-7SE (United Kingdom)
3. IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

We observe the simultaneous creation of paramagnetic Si and N dangling bonds when N-rich silicon nitride thin films are optically illuminated at low temperatures (110 K). Generally, only the Si dangling bond is observed if the illumination is performed at room temperature. In contrast, the N dangling bond is metastable, and has previously only been observed after a high temperature post-deposition anneal and followed by illumination. We propose that the low temperature illumination causes two processes: (1) Charge conversion of N[sub 3][equivalent to]Si[sup +] and N[sub 3][equivalent to]Si[sup [minus]] sites to give two N[sub 3][equivalent to]Si[center dot]dangling bonds, and (2) charge transfer between Si[sub 2]=N[sup [minus]] and N[sub 3][equivalent to]Si[sup +] sites to form Si[sub 2]=N[center dot] and N[sub 3][equivalent to]Si[center dot]dangling bonds.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6082513
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:19; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
AMORPHOUS STATE
CHARGE STATES
DEFECTS
ELECTROMAGNETIC RADIATION
ELECTRON SPIN RESONANCE
ELECTRON TRANSFER
ENERGY LEVELS
EXCITED STATES
HYDROGEN ADDITIONS
MAGNETIC RESONANCE
METASTABLE STATES
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
RESONANCE
SILICON COMPOUNDS
SILICON NITRIDES
TEMPERATURE DEPENDENCE
VISIBLE RADIATION